Business Wire

Transphorm’s Second 900 V GaN FET is Now in Production

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm Inc. (OTCQB: TGAN)—a pioneer in the development and manufacturing of high reliability, high performance gallium nitride (GaN) power semiconductors—today ...
Business Wire

The Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from Efficient Power Conversion

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN ®) power FETs and ICs, expands the selection of low voltage, ...

EPC Showcases GaN Power Solutions for Robotics, Drones, and AI Servers at PCIM Europe 2026

High power density DCDC converters from 800 V to point-of-load use EPC’s latest-generation GaN devices. EL SEGUNDO, CA, ...
EDN

TI expands GaN FET family

Texas Instruments Inc. (TI) has expanded its low-power gallium nitride (GaN) portfolio, with a new family of GaN field-effect transistors (FETs). These GaN FET devices can improve power density and ...
Electronic Design

A New Generation of GaN Power ICs Mimic Silicon MOSFETs

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
ecoustics

HiFi Rose’s RA280 Integrated Amplifier Features GaN FET Technology and A Much Lower Price Than The Flagship RA180

The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...
EDN

650-V GaN FETs electrify EV charger designs

Gallium nitride field-effect transistors (GaN FETs) use electric fields to modulate the current flowing through semiconductor channels. Electronics engineers frequently integrate 650-V components into ...
WRIC

First GaN FET with 1 mΩ On-Resistance Announced by EPC

EL SEGUNDO, CALIFORNIA, UNITED STATES, February 27, 2024 /EINPresswire.com/ -- EPC introduces the 100 V, 1 mOhm EPC2361 GaN FET in compact 3 mm x 5 mm QFN package ...
WGN Radio

Industry-Leading 300 V Rad-Hard GaN FET for Higher Voltage Satellite Power Systems Now Available from EPC Space

The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers ...
Semiconductor Engineering

A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...
Electronic Design

“Driving” GaN into High-Density Switching Power Supplies

This article is part of the TechXchange: Gallium Nitride (GaN). Gallium nitride (GaN) continues to gain ground in power electronics. Not only does the technology eliminate reverse recovery, but it ...
SpaceNews

Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...