Length of diffusion effects in MOS BSIM models can significantly impact analog circuit simulations at 130 nanometers and below. These effects, also known as stress effects from the shallow trench ...

The length scale over which the travelling electron spin keeps the memory of its initial orientation is known as the spin-diffusion length 1,2,3,4,5, which is a critical parameter for many spintronic ...

Analog designers have always had to worry about physical layout to get good matching of devices. Variations in doping levels across the chip, usually assumed to be in a gradient in one or two ...