The all-GaN 10 kW 800 V–to–50 V DC-DC platform employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency ...
TORRANCE, Calif., Oct. 18, 2024 (GLOBE NEWSWIRE) -- At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation ...
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