Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
Cross Section of Gate-All-Around Transistor and Wiring Applied Materials introduced three new chipmaking systems that boost ...
Gallium nitride, or GaN, is seen as a successor to silicon in high-power electronics because it can reduce energy losses ...
EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon ...
GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...
As the demand for greater communication bandwidth continues to grow, next-generation satellites must deliver higher data ...
A research team at Fudan University in Shanghai has successfully built complex electronic circuits inside thin, flexible ...
Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...
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Moore's law: The famous rule of computing has reached the end of the road, so what comes next?
For half a century, computing advanced in a reassuring, predictable way. Transistors—devices used to switch electrical signals on a computer chip—became smaller. Consequently, computer chips became ...
ZHUHAI, GUANGDONG, CHINA, January 21, 2026 /EINPresswire.com/ -- Environmental responsibility has transitioned from ...
Researchers in Germany have unveiled an ultra-fast light switch made of very thin semiconductor layers, that runs around 10,000 times faster than today’s electronic transistors. Designed by a team of ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
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