Trumpf Photonic Components is unveiling its new 100G VCSEL with a live demonstration at the European Conference on Optical ...

Unlike conventional 2D semiconductors that cannot detect low-energy photons due to a wide band gap, the TCI structure allows ...

STARLight, selected by the European Commission under the EU CHIPS Joint Undertaking, aims to develop application-driven ...

In years gone by, the performance figures for nitride-based LEDs operating in the deep-UV fell far short of those emitting in ...

Rohm and Infineon have signed an agreement to collaborate on packages for SiC power semiconductors used in applications such ...

Today’s GaN power devices are well-established, generating significant sales in consumer electronics. They are widely ...

Taiwan's Industrial Technology Research Institute (ITRI) and the UK's National Physical Laboratory (NPL) have signed a ...

MIT researchers with colleagues from the University of Chemistry and Technology in Prague have used 2D CrSBr, a van der Waals ...

UMEC’s 250 W adapter offers efficiency of 95 percent, a power density increase of around 39 percent. The CoolGaN transistors ...

Our experience shows that working as a group has stronger impact and is more efficient for all parties. So, if a delegation ...

Schematic cross-section of the first (left) and second (right) generation HEMTs studied at CRHEA. Recently, due to its wide ...

GaN-based green mini-LEDs, critical for next-generation displays, wearable devices, and visible light communication, have ...