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A massive leap in semiconductor technology has been achieved by Nagoya University and Asahi Kasei. They have successfully developed a High Electron Mobility Transistor (HEMT) using an Aluminum Nitride substrate. This innovation doubles the breakdown voltage compared to standard Gallium Nitride devices and significantly reduces resistance. With superior thermal conductivity and a wider bandgap than Silicon Carbide, Aluminum Nitride is paving the way for more powerful radar systems and next-genera
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